Selective Area Growth of GaN on Si Substrate Using SiO2 Mask by Metalorganic Vapor Phase Epitaxy
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- Material Type
- 記事
- Title
- Author/Editor
- Yasutoshi KawaguchiYoshio HondaHidetaka Matsushima 他
- Author Heading
- Periodical title
- Japanese journal of applied physics. Pt. 2, Letters
- No. or year of volume/issue
- 37(8B) 1998.08
- Volume
- 37
- Issue
- 8B
- Pages
- L966～969
- Publication date of volume/issue (W3CDTF)
- 1998-08