プラズマ発光分光分析によるGaN電子サイクロトロン共鳴プラズマ励起分子線エピタキシャル成長の観察
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- Material Type
- 記事
- Author/Editor
- 千葉 恭男冨成 達也名西 〔ヤス〕之
- Periodical title
- 真空 = Journal of the Vacuum Society of Japan
- No. or year of volume/issue
- 42(4) 1999.04
- Volume
- 42
- Issue
- 4
- Pages
- 530～534
- Publication date of volume/issue (W3CDTF)
- 1999-04
- ISSN (Periodical Title)
- 0559-8516
- ISSN-L (Periodical Title)
- 0559-8516
- Publication (Periodical Title)
- 東京 : 日本真空協会
- Place of Publication (Country Code)
- JP
- Text Language Code
- jpn
- NDLC
- Target Audience
- 一般
- Holding library
- 国立国会図書館
- Call No.
- Z16-474
- Data Provider (Database)
- 国立国会図書館 : 国立国会図書館雑誌記事索引
- Bibliographic ID (NDL)
- 4750737
- Bibliographic Record Category (NDL)
- 632
- Summary, etc.
- We observed excited species near a substrate during GaN growth by optical emission spectroscopy (OES). Both GaN growth rate and excited Ga emission intensity were studied by varying substrate bias conditions. Decrease in Ga emission intensity under high positive bias condition can be explained by suppression of Ga desorption. Thus, OES is considered to be a useful tool to understand GaN growth mechanism in ECR plasma-excited MBE.<BR>We also demonstrated GaN growth using helium-nitrogen mixed gas plasma. It was found that, compared with the GaN growth using nitrogen plasma without helium, the GaN growth rate was increased by using the mixed gas plasma.
- DOI
- 10.3131/jvsj.42.530
- Access Restrictions
- インターネット公開
- Data Provider (Database)
- 科学技術振興機構 : J-STAGE
- Summary, etc.
- We observed excited species near a substrate during GaN growth by optical emission spectroscopy (OES). Both GaN growth rate and excited Ga emission intensity were studied by varying substrate bias conditions. Decrease in Ga emission intensity under high positive bias condition can be explained by suppression of Ga desorption. Thus, OES is considered to be a useful tool to understand GaN growth mechanism in ECR plasma-excited MBE.<BR>We also demonstrated GaN growth using helium-nitrogen mixed gas plasma. It was found that, compared with the GaN growth using nitrogen plasma without helium, the GaN growth rate was increased by using the mixed gas plasma.
- DOI
- 10.3131/jvsj.42.530
- Access Restrictions
- インターネット公開
- Related Material (URI)
- Data Provider (Database)
- 国立情報学研究所 : CiNii Research
- Original Data Provider (Database)
- Japan Link Center雑誌記事索引データベースCrossrefCiNii Articles
- Bibliographic ID (NDL)
- 4750737
- NAID
- 10002476985