ホットホール注入によるトンネルゲート酸化膜の絶縁性劣化(特集:極微構造集積デバイス・プロセス技術)

Journal name: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems 121(3) 2001.3

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

CiNii Research
Search Service
Digital
You can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.
Check the holdings of this book

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 記事
Title: ホットホール注入によるトンネルゲート酸化膜の絶縁性劣化
Author/Editor: 鎌倉良成
出口和亮
石田明寛他
Series Title: 特集:極微構造集積デバイス・プロセス技術
Author Heading: 鎌倉良成
出口和亮
石田明寛
Periodical title: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
No. or year of volume/issue: 121(3) 2001.3
Volume: 121
Issue: 3
Pages: 492～498
Publication date of volume/issue (W3CDTF): 2001-03
ISSN (Periodical Title): 0385-4221
ISSN-L (Periodical Title): 0385-4221
Publication (Periodical Title): 東京 : 電気学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 経時劣化
MOSFET
NDLC: ZN31
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-795
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 5689475
http://id.ndl.go.jp/bib/5689475
Bibliographic Record Category (NDL): 632