Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy (Quantum Dot Structures)

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Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy(Quantum Dot Structures)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
5748065
Material type
記事
Author
Tomonobu Katoほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2001-03
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 40(3B) (通号 536) (増刊) 2001.3
Publication Page
p.1896~1898
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Detailed bibliographic record

Summary, etc.:

A GaN/AlGaN double heterostructure was fabricated on the (1101) facets of a GaN triangular structure prepared by selective area growth by metalorganic...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Tomonobu Kato
Yoshio Honda
Yasutoshi Kawaguchi 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
40(3B) (通号 536) (増刊) 2001.3
Volume
40
Issue
3B
Sequential issue number
536