Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron

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Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6193736
Material type
記事
Author
Daniel Alquierほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2002-06
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 41(6A) (通号 559) 2002.6
Publication Page
p.3625~3628
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Detailed bibliographic record

Summary, etc.:

In this paper, we shed light on the strong interaction between the cavity layer induced by helium implantation and boron. First, we present the impact...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Daniel Alquier
Fabrice Roqueta
Laurent Ventura 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
41(6A) (通号 559) 2002.6
Volume
41
Issue
6A
Sequential issue number
559
Pages
3625~3628