Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors

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Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6450479
Material type
記事
Author
Hisao Kawauraほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2003-02
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 42(2A) (通号 570) 2003.2
Publication Page
p.351~357
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Detailed bibliographic record

Summary, etc.:

Direct tunneling from the source to the drain in a nanometer-scale silicon metal–oxide–semiconductor field-effect transistor (MOSFET) was investigated...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Hisao Kawaura
Toshio Baba
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
42(2A) (通号 570) 2003.2
Volume
42
Issue
2A
Sequential issue number
570
Pages
351~357