Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy

Icons representing 記事

Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6450492
Material type
記事
Author
Aftab A. Memonほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2003-02
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 42(2A) (通号 570) 2003.2
Publication Page
p.358~362
View All

Detailed bibliographic record

Summary, etc.:

Piezoelectric photothermal spectroscopy (PPTS) measurements were conducted on p- and n-type silicon, ‹100› orientation samples. We showed that a PPTS ...

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

  • CiNii Research

    Search Service
    Digital
    You can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type
記事
Author/Editor
Aftab A. Memon
Atsuhiko Fukuyama
Tetsuo Ikari
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
42(2A) (通号 570) 2003.2
Volume
42
Issue
2A
Sequential issue number
570
Pages
358~362