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雑誌FEDジャーナル
Volume number10(1)-12(5) 19990000-20010000(Suppl.共 以後休刊)
ArticleMonolithic...

Monolithic integration of Si-interband tunneling diodes with a MOSFET for ultralow voltage operation static random access memory

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Monolithic integration of Si-interband tunneling diodes with a MOSFET for ultralow voltage operation static random access memory

Call No. (NDL)
Z16-2513
Bibliographic ID of National Diet Library
6456053
Material type
記事
Author
Kiyoshi Morimotoほか
Publisher
東京 : 新機能素子研究開発協会
Publication date
2000
Material Format
Paper
Journal name
FEDジャーナル / 新機能素子研究開発協会 [編] 11(-) (SUPPL.) 2000
Publication Page
p.15～20
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Paper

Material Type
記事
Title
Monolithic integration of Si-interband tunneling diodes with a MOSFET for ultralow voltage operation static random access memory
Author/Editor
Kiyoshi Morimoto
Haruyuki Sorada
Kiyoyuki Morita
Author Heading
Kiyoshi Morimoto
Haruyuki Sorada
Kiyoyuki Morita
Periodical title
FEDジャーナル / 新機能素子研究開発協会 [編]
No. or year of volume/issue
11(-) (SUPPL.) 2000
Volume
11
Issue
-
Other Volume
SUPPL
Pages
15～20