縦型CVD炉における4H-SiCエピタキシャル層の成長と電気特性 (シリコンカーバイド素子)

縦型CVD炉における4H-SiCエピタキシャル層の成長と電気特性

(シリコンカーバイド素子)

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Material Type: 記事
Title: 縦型CVD炉における4H-SiCエピタキシャル層の成長と電気特性
Author/Editor: 土田秀一
鎌田功穂
Series Title: シリコンカーバイド素子
Author Heading: 土田秀一
鎌田功穂
Periodical title: FEDジャーナル / 新機能素子研究開発協会 [編]
No. or year of volume/issue: 12(3) 2001
Volume: 12
Issue: 3
Pages: 17～20
Publication date of volume/issue (W3CDTF): 2001
ISSN (Periodical Title): 0918-2772
ISSN-L (Periodical Title): 0918-2772
Publication (Periodical Title): 東京 : 新機能素子研究開発協会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZN33
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-2513
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 6456083
http://id.ndl.go.jp/bib/6456083
Bibliographic Record Category (NDL): 632