Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers
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- Material Type
- 記事
- Author/Editor
- Masashi TsukiharaYoshiki NaoiHongdong Li 他
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 42(4A) (通号 573) 2003.4
- Volume
- 42
- Issue
- 4A
- Sequential issue number
- 573
- Pages
- 1514～1516