Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals

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Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6652787
Material type
記事
Author
Masaru Kamanoほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2003-08
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 42(8) (通号 581) 2003.8
Publication Page
p.4905~4908
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Detailed bibliographic record

Summary, etc.:

We have measured photothermal spectra of bulk and film GaN crystals by the photothermal divergence (PTD) method in the temperature range from 110 K to...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Masaru Kamano
Masanobu Haraguchi
Masuo Fukui 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
42(8) (通号 581) 2003.8
Volume
42
Issue
8
Sequential issue number
581
Pages
4905~4908