Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime

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Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6857776
Material type
記事
Author
Michio Tajimaほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2004-02
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 43(2) (通号 588) 2004.2
Publication Page
p.432~438
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Detailed bibliographic record

Summary, etc.:

We characterized the nonuniformities of state-of-the-art ultrathin silicon-on-insulator (SOI) wafers by photoluminescence (PL) intensity mapping and m...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Michio Tajima
Zhiqiang Li
Shingo Sumie 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
43(2) (通号 588) 2004.2
Volume
43
Issue
2
Sequential issue number
588
Pages
432~438