Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate(2)Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping

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Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate(2)Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
6930894
Material type
記事
Author
Katsuhiko Nakaiほか
Publisher
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Publication date
2004-04
Material Format
Digital
Journal name
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 43(4A) (通号 590) 2004.4
Publication Page
p.1247~1253
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Detailed bibliographic record

Summary, etc.:

Two types of crystal defects, stacking fault induced by a nitrogen-doped substrate (N-SF) and elliptical pit (E-pit), are generated in the epitaxial l...

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Bibliographic Record

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Digital

Material Type
記事
Author/Editor
Katsuhiko Nakai
Koichi Kitahara
Yasumitsu Ohta 他
Periodical title
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
No. or year of volume/issue
43(4A) (通号 590) 2004.4
Volume
43
Issue
4A
Sequential issue number
590
Pages
1247~1253