Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

• Material Type: 記事
• Title: Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
• Author/Editor: Hiroyuki Matsunami
• Author Heading: Hiroyuki Matsunami
• Periodical title: Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
• No. or year of volume/issue: 43(10) (通号 602) 2004.10
• Volume: 43
• Issue: 10
• Sequential issue number: 602
• Pages: 6835～6847
• Publication date of volume/issue (W3CDTF): 2004-10
• ISSN (Periodical Title): 0021-4922
• ISSN-L (Periodical Title): 0021-4922
• Publication (Periodical Title): Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
• Place of Publication (Country Code): JP
• Text Language Code: eng
• Subject Heading: SiC; Epitaxial growth; Step-controlled epitaxy; Bulk growth; Ion implantation; MOS interface; Ohmic contacts; Schottky diodes; Power electronic devices
• NDLC: ZM35
• Target Audience: 一般
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Holding library: 国立国会図書館
• Call No.: Z53-A375
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11226674; https://dl.ndl.go.jp/pid/11226674
• Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 7123909; http://id.ndl.go.jp/bib/7123909
• Bibliographic Record Category (NDL): 632

• Summary, etc.: Technological breakthroughs in growth control of SiC are reviewed. Step-controlled epitaxy by using off-axis SiC {0001} substrates to grow high-qualit...