Inteface Trap Generation Induced by Charge Pumping Current under Dynamic Oxide Field Stresses

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 105(109) 2005.6.10

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Material Type: 記事
Title: Inteface Trap Generation Induced by Charge Pumping Current under Dynamic Oxide Field Stresses
Author/Editor: Shiyang Zhu
中島安理
大橋拓夫他
Author Heading: Shiyang Zhu
中島安理
大橋拓夫
Alternative Title: ダイナミック酸化膜電界ストレス下でのチャージポンピング電流に起因する界面トラップ形成
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 105(109) 2005.6.10
Volume: 105
Issue: 109
Pages: 17～22
Publication date of volume/issue (W3CDTF): 2005-06-10
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: MOSFET
信頼性
ダイナミックストレス
SiON
Reliability
Dynamic stress
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2005-73
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 7367750
http://id.ndl.go.jp/bib/7367750
Bibliographic Record Category (NDL): 632