記事

Growth and Chractertics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia

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Growth and Chractertics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia

Call No. (NDL)
Z54-J337
Bibliographic ID of National Diet Library
7989413
Material type
記事
Author
Fawang Yanほか
Publisher
Tokyo : Japan Society of Applied Physics
Publication date
2006-07
Material Format
Paper
Journal name
Japanese journal of applied physics. Part 2, Letters & express letters 45(24-28) (通号 443) 2006.7
Publication Page
p.L697～700
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Paper

Material Type
記事
Title
Growth and Chractertics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia
Author/Editor
Fawang Yan
Katsushi Nishino
Shiro Sakai
Author Heading
Fawang Yan
Katsushi Nishino
Shiro Sakai
Periodical title
Japanese journal of applied physics. Part 2, Letters & express letters
No. or year of volume/issue
45(24-28) (通号 443) 2006.7
Volume
45
Issue
24-28
Sequential issue number
443
Pages
L697～700