Source of Surface Morphological Defects Formed on 4H-SiC Homoepitaxial Films
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- Material Type
- 記事
- Author/Editor
- Tatsuya OkadaKengo OchiHiroyuki Kawahara 他
- Author Heading
- Periodical title
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
- No. or year of volume/issue
- 45(10A) (通号 641) 2006.10
- Volume
- 45
- Issue
- 10A
- Sequential issue number
- 641
- Pages
- 7625～7631