p-GaNショットキー接触のI-V, C-V特性--キャリア濃度,金属仕事関数依存性 (電子デバイス)

p-GaNショットキー接触のI-V, C-V特性--キャリア濃度,金属仕事関数依存性

(電子デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 108(87) 2008.6.13・14

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Material Type: 記事
Title: p-GaNショットキー接触のI-V, C-V特性--キャリア濃度,金属仕事関数依存性
Author/Editor: 福島慶広
荻須啓太
葛原正明他
Series Title: 電子デバイス
Author Heading: 福島慶広
荻須啓太
葛原正明
Alternative Title: I-V and C-V characteristics of p-GaN Schottky contacts: carrier concentration and metal work function dependences
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 108(87) 2008.6.13・14
Volume: 108
Issue: 87
Pages: 5～10
Publication date of volume/issue (W3CDTF): 2008-06
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: p-GaN
金属-半導体接触
ショットキー障壁高さ
ドーピング濃度
金属仕事関数
metal/semiconductor
Schottky barrier height
doping concentration
metal work function
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ED2008-23
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 9573314
http://id.ndl.go.jp/bib/9573314
Bibliographic Record Category (NDL): 632