New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs(100) Substrates. 42 4B

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New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs(100) Substrates.

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Summary, etc.：: We report the effects of the exposure of homoepitaxially grown GaAs buffer layers to high temperature with no As overpressure on the InAs growth front...

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Material Type: 記事
Title: New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs(100) Substrates.
Volume: 42
4B
Author/Editor: Saucedo-Zeni Nadia
Yu Gorbatchev Andrei
Méndez-García Víctor-Hugo
Author Heading: Saucedo-Zeni Nadia
Yu Gorbatchev Andrei
Méndez-García Víctor-Hugo
Publication Date: 2003
Publication Date (W3CDTF): 2003
Periodical title: Japanese Journal of Applied Physics
No. or year of volume/issue: 42 4B
Volume: 42
Issue: 4B
Pages: L410-L413
ISSN (Periodical Title): 0021-4922
1347-4065
Subject Heading: molecular beam epitaxy
surfactant
quantum dots
InAs/GaAs
self-assembled
Target Audience: 一般
DOI: 10.1143/jjap.42.L410
Access Restrictions: インターネット公開
Data Provider (Database): 科学技術振興機構 : J-STAGE