Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH4 Plasmas

• Material Type: 記事
• Title: Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH4 Plasmas
• Volume: 43; 1A/B
• Author/Editor: Ohta Takayuki; Ishida Tetsuro; Hori Masaru; Goto Toshio; Ito Masafumi; Kawakami Satoru
• Author Heading: Ohta Takayuki; Ishida Tetsuro; Hori Masaru; Goto Toshio; Ito Masafumi; Kawakami Satoru
• Publication Date: 2004
• Publication Date (W3CDTF): 2004
• Periodical title: Japanese Journal of Applied Physics
• No. or year of volume/issue: 43 1A/B
• Volume: 43
• Issue: 1A/B
• Pages: L94-L96
• ISSN (Periodical Title): 0021-4922; 1347-4065
• Subject Heading: very high frequency capacitively coupled plasma; translational temperature; UVAS; Si
• Target Audience: 一般
• DOI: 10.1143/JJAP.43.L94
• Access Restrictions: インターネット公開
• Data Provider (Database): 科学技術振興機構 : J-STAGE

• Summary, etc.: The behaviors of translational temperatures and absolute densities of Si atoms in very high frequency (VHF)-capacitively coupled SiH<SUB>4</SUB> plasm...