ICTS/DLTS法によるGaN系HEMTの電流コラプス現象の温度依存性

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Material Type: 記事
Title: ICTS/DLTS法によるGaN系HEMTの電流コラプス現象の温度依存性
Author/Editor: 赤堀一登
大嶽晃慶
中野颯也
久瀬雷矢
山中公博
田口博久
Author Heading: 赤堀一登
大嶽晃慶
中野颯也
久瀬雷矢
山中公博
田口博久
Alternative Title: Temperature Dependence of Current Collapse Phenomenon of GaN HEMT by ICTS/DLTS Method
Periodical title: マイクロエレクトロニクスシンポジウム論文集
No. or year of volume/issue: 27:2017.8.29・30
Volume: 27
Pages: 331-334
Publication date of volume/issue (W3CDTF): 2017-08
Publication (Periodical Title): 東京 : エレクトロニクス実装学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZN33
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-1617
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 028553390
http://id.ndl.go.jp/bib/028553390
Bibliographic Record Category (NDL): 632