AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Material type: 文書・図像類

Author: Yafune, N.ほか

Publisher: The Institution of Engineering and Technology

Publication date: 2014-01-30

Material Format: Digital

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Note (General)：: We demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/...

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Material Type: 文書・図像類
Title: AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation
Author/Editor: Yafune, N.
Hashimoto, S.
Akita, K.
Yamamoto, Y.
Tokuda, H.
Kuzuhara, M.
Author Heading: Yafune, N.
Hashimoto, S.
Akita, K.
Yamamoto, Y.
Tokuda, H.
Kuzuhara, M.
Publication, Distribution, etc.: The Institution of Engineering and Technology
Publication Date: 2014-01-30
Publication Date (W3CDTF): 2014-01-30
Periodical title: Electronics Letters
No. or year of volume/issue: 50 3
Volume: 50
Issue: 3
Pages: 211-212
ISSN (Periodical Title): ISSN : 0013-5194
Text Language Code: eng
Subject Heading: AlN
AIGaN
HEMT
Target Audience: 一般
Note (General): We demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, emonstrating that our AlN/AlGaN approach on an AlN substrate is promising for stable high-temperature operation.
Source: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22897&item_no=1&attribute_id=22&file_no=1
https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22897&item_no=1&attribute_id=22&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ