A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT〓200 °C)

Material type: 文書・図像類

Author: YAMAMOTO, Aほか

Publisher: Elsevier

Publication date: 2007-01

Material Format: Digital

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Note (General)：: Using the ArF excimer laser-induced MOCVD method, InN_xO_y thin films are grown on a glass substrate. The photolytical decomposition of NH_3enables to...

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Material Type: 文書・図像類
Title: A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT〓200 °C)
Author/Editor: YAMAMOTO, A
MIYANISHI, M
KUNISHIGE, T
KOBAYASHI, T
HASHIMOTO, A
NAMBO, Y
Author Heading: YAMAMOTO, A
MIYANISHI, M
KUNISHIGE, T
KOBAYASHI, T
HASHIMOTO, A
NAMBO, Y
Publication, Distribution, etc.: Elsevier
Publication Date: 2007-01
Publication Date (W3CDTF): 2007-01
Periodical title: Journal of crystal growth
No. or year of volume/issue: 298
Volume: 298
Pages: 390-393
Text Language Code: eng
Subject Heading: A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting indium compounds
Target Audience: 一般
Note (General): Using the ArF excimer laser-induced MOCVD method, InN_xO_y thin films are grown on a glass substrate. The photolytical decomposition of NH_3enables to grow them even at room temperature. It is found that the InN_xO_y thin films grown at a temperature less than 250 °C show an excellent photocatalytic decomposition of H_2S under UV irradiation, while the activity of the films grown at a temperature higher than 300 °C is very small, less than 1/4 of that for the low-temperature films. The excellent photocatalytic activity for the low-temperature films is closely related to the amorphous phase of the films.
Access Restrictions: 限定公開
Related Material (DOI): 10.172
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ