Development of Extremely High Radiation Resistant Electronic Devices Based on Silicon Carbide Semiconductor

• Material Type: 文書・図像類
• Title: Development of Extremely High Radiation Resistant Electronic Devices Based on Silicon Carbide Semiconductor
• Author/Editor: Ohshima, Takeshi; Takeyama, Akinori; Makino, Takahiro; Yamazaki, Yuichi; Shimizu, K.; Tanaka, Y.; Meguro, T.; Hasebe, F.; Kuroki, S-I.; 大島 武; 武山 昭憲; 牧野 高紘; 山崎 雄一
• Author Heading: Ohshima, Takeshi; Takeyama, Akinori; Makino, Takahiro; Yamazaki, Yuichi; Shimizu, K.; Tanaka, Y.; Meguro, T.; Hasebe, F.; Kuroki, S-I.; 大島 武; 武山 昭憲; 牧野 高紘; 山崎 雄一
• Publication Date: 2018-11-08
• Publication Date (W3CDTF): 2018-11-08
• Text Language Code: eng
• Target Audience: 一般
• Note (General): The 3rd Interational Symposium on Biomedical Engineering (ISBE2018)
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構 学術機関リポジトリ

• Summary, etc.: After the Great East Japan Earthquake in March 2011, electronic devices with extremely high radiation tolerance (rad-hard), such as MGy order, are req...