Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs

• Material Type: 文書・図像類
• Title: Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs
• Author/Editor: Hoi, Wong Man; Nakata, Yoshiaki; Lin, Chia-Hung; Sasaki, Kohei; Morikawa, Yoji; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka; 武山 昭憲; 牧野 高紘; 大島 武
• Author Heading: Hoi, Wong Man; Nakata, Yoshiaki; Lin, Chia-Hung; Sasaki, Kohei; Morikawa, Yoji; Goto, Ken; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka; 武山 昭憲; 牧野 高紘; 大島 武
• Publication Date: 2018-06-12
• Publication Date (W3CDTF): 2018-06-12
• Text Language Code: eng
• Target Audience: 一般
• Note (General): 20th Workshop on Dielectrics in Microelectronics
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構 学術機関リポジトリ

• Summary, etc.: Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applicat...