Advances in Ga2O3 MOSFETs for power switching and beyond

• Material Type: 文書・図像類
• Title: Advances in Ga2O3 MOSFETs for power switching and beyond
• Author/Editor: Higashiwaki, Masataka; Hoi Wong, Man; Kamimura, Takafumi; Nakata, Yoshiaki; Chia-Hung, Lin; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Singh, Manikant; Pomeroy, James; Uren, Michael; Casbon, Michael; Tasker, Paul; Goto, Ken; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Kuball, Martin; Murakami, Hisashi; Kumagai, Yoshinao
• Author Heading: Higashiwaki, Masataka; Hoi Wong, Man; Kamimura, Takafumi; Nakata, Yoshiaki; Chia-Hung, Lin; Takeyama, Akinori; Makino, Takahiro; Ohshima, Takeshi; Singh, Manikant; Pomeroy, James; Uren, Michael; Casbon, Michael; Tasker, Paul; Goto, Ken; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Kuball, Martin; Murakami, Hisashi; Kumagai, Yoshinao
• Publication Date: 2018-11-26
• Publication Date (W3CDTF): 2018-11-26
• Text Language Code: eng
• Target Audience: 一般
• Note (General): MRS Fall Meeting & Exhibit
• Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構 学術機関リポジトリ

• Summary, etc.: Ga2O3 has emerged as a noteworthy ultrawide bandgap semiconductor in the past five years. Owing to excellent material properties based on an extremely...