Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model

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Summary, etc.：: Exposure and development processes of EUV resists are investigated using numerical model and simulation. Diffusion limited aggregation (DLA) and perco...

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Material Type: その他
Title: Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model
Author/Editor: 佐々木, 明
Sasaki, Akira
Author Heading: 佐々木, 明
Sasaki, Akira
Publication Date: 2019-09-16
Publication Date (W3CDTF): 2019
Target Audience: 一般
Note (General): SPIE photomask technology + EUV lithography
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 国立研究開発法人量子科学技術研究開発機構 : 量子科学技術研究開発機構学術機関リポジトリ