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極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発

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極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発

Material type
文書・図像類
Author
川江, 健ほか
Publisher
-
Publication date
2011-05-20
Material Format
Digital
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-
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金沢大学理工研究域電子情報通信学系極限環境動作を目指した新規強誘電体不揮発性メモリデバイスの実現を目指し、ワイドギャップ半導体ダイヤモンド上に高キュリー温度非鉛強誘電体BiFeO3(BFO)を堆積した積層構造の作製と特性評価を行った。ボロン添加した導電性ダイヤモンド層上にBFOが結晶化可能である事お...

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https://kaken.nii.ac.jp/search/?qm=30401897

https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760233/

https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-21760233/21760233seika/

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Digital

Material Type
文書・図像類
Title
極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発
Author/Editor
川江, 健
Kawae, Takeshi
Author Heading
川江, 健
Kawae, Takeshi
Publication Date
2011-05-20
Publication Date (W3CDTF)
2011-05-20
Alternative Title
Development of advanced ferroelectric random access memory devices in more extensive region
Periodical title
平成22(2010)年度 科学研究費補助金 若手研究(B) 研究成果報告書 = 2010 Fiscal Year Final Research Report
No. or year of volume/issue
2009-2010
Volume
2009-2010