文書・図像類

低損失縦型ダイヤモンドパワーMOSFET

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低損失縦型ダイヤモンドパワーMOSFET

Material type
文書・図像類
Author
德田, 規夫ほか
Publisher
-
Publication date
2020-05-12
Material Format
Digital
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金沢大学ナノマテリアル研究所ダイヤモンドは、様々な分野で用いられているパワーデバイスとして最も高い省エネ効果が期待されている半導体材料である。本研究で得られた主な成果は、①縦型ダイヤモンドMOSFET構造作製のための、炭素固溶反応を用いたV字及びU字トレンチ構造形成プロセスの開発、②低チャネル移動度...

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https://kaken.nii.ac.jp/search/?qm=80462860

https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H02786/

https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H02786/17H02786seika/

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Digital

Material Type
文書・図像類
Title
低損失縦型ダイヤモンドパワーMOSFET
Author/Editor
德田, 規夫
Tokuda, Norio
Author Heading
德田, 規夫
Tokuda, Norio
Publication Date
2020-05-12
Publication Date (W3CDTF)
2020-05-12
Alternative Title
Low-loss vertical-type diamond power MOSFET
Periodical title
令和1(2019)年度 科学研究費補助金 基盤研究(B) 研究成果報告書 = 2019 Fiscal Year Final Research Report
No. or year of volume/issue
2017-04-01 - 2020-03-31
Volume
2017-04-01 - 2020-03-31