Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method

Material type: 文書・図像類

Author: 宮田, 浩旭ほか

Publisher: 宇宙航空研究開発機構

Publication date: 2005-03-31

Material Format: Digital

Capacity, size, etc.: -

NDC: -

View All

Notes on use

Note (General)：: The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are difficult to grow so far. In the present research, ...

Search by Bookstore

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

List of Cooperating Institutions and Databases

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

JAXA Repository
Digital
You can check the holdings of institutions and databases with which 学術機関リポジトリデータベース（IRDB）（機関リポジトリ） is linked at the site of 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）.
JAXA Repository

Search by Bookstore

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type: 文書・図像類
Title: Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method
Author/Editor: 宮田, 浩旭
緒方, 康行
木下, 恭一
足立, 聡
依田, 真一
鶴, 哲也
村松, 祐治
Miyata, Hiroaki
Ogata, Yasuyuki
Kinoshita, Kyoichi
Adachi, Satoshi
Yoda, Shinichi
Tsuru, Tetsuya
Muramatsu, Yuji
Author Heading: 宮田, 浩旭
緒方, 康行
木下, 恭一
足立, 聡
依田, 真一
鶴, 哲也
村松, 祐治
Miyata, Hiroaki
Ogata, Yasuyuki
Kinoshita, Kyoichi
Adachi, Satoshi
Yoda, Shinichi
Tsuru, Tetsuya
Muramatsu, Yuji
Publication, Distribution, etc.: 宇宙航空研究開発機構
Publication Date: 2005-03-31
Publication Date (W3CDTF): 2005-03-31
Alternative Title: 今期の詳細な結果:Traveling Liquidus-Zone法による均一なSi(0.5)Ge(0.5)単結晶の成長
Periodical title: 宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
No. or year of volume/issue: JAXA-RR-04-022E
Volume: JAXA-RR-04-022E
Pages: 7-13
ISSN (Periodical Title): ISSN : 1349-1113
Text Language Code: eng
Subject Heading: 結晶成長
飽和溶融帯移動法
シリコン化合物
液相線
結晶性
薄膜
Si-Ge結晶
物質拡散
拡散係数
X線回折
ラウエ法
成長速度
状態図
crystal growth
traveling liquidus-zone method
silicon compound
liquidus
crystallinity
thin film
Si-Ge crystal
mass transfer
diffusion coefficient
X-ray diffraction
Laue method
growth rate
phase diagram
Target Audience: 一般
Note (General): The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are difficult to grow so far. In the present research, the Traveling Liquidus-Zone method (TLZ method) which was invented in the group as a new crystal growth method to the growth of Si-Ge has been applied. The diameter of grown crystal was 2 mm and the length was 15 mm. Crystals were well seeded and had the orientation of silicon seeds in spite of the large lattice mismatch. The compositional variation of the crystals was very small and the composition was in the mole fraction range of 0.5 +/- 0.016 in germanium. The lattice constant determined by the X-ray powder diffraction was 55.38 nm.
資料番号: AA0048451001
レポート番号: JAXA-RR-04-022E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=2363&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=2363&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ