Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)

Material type: 文書・図像類

Author: 鶴, 哲也ほか

Publisher: 宇宙航空研究開発機構

Publication date: 2006-03-31

Material Format: Digital

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Note (General)：: We grew compositionally homogeneous platy single crystals of In(0.1)Ga(0.9)As composition by the Traveling Liquidus Zone (TLZ) method. We also fabrica...

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Material Type: 文書・図像類
Title: Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)
Author/Editor: 鶴, 哲也
宮田, 浩旭
村松, 祐治
緒方, 康行
木下, 恭一
足立, 聡
依田, 眞一
荒井, 昌和
渡辺, 孝夫
近藤, 康洋
Tsuru, Tetsuya
Miyata, Hiroaki
Muramatsu, Yuji
Ogata, Yasuyuki
Kinoshita, Kyoichi
Adachi, Satoshi
Yoda, Shinichi
Arai, Masakazu
Watanabe, Takao
Kondo, Yasuhiro
Author Heading: 鶴, 哲也
宮田, 浩旭
村松, 祐治
緒方, 康行
木下, 恭一
足立, 聡
依田, 眞一
荒井, 昌和
渡辺, 孝夫
近藤, 康洋
Tsuru, Tetsuya
Miyata, Hiroaki
Muramatsu, Yuji
Ogata, Yasuyuki
Kinoshita, Kyoichi
Adachi, Satoshi
Yoda, Shinichi
Arai, Masakazu
Watanabe, Takao
Kondo, Yasuhiro
Publication, Distribution, etc.: 宇宙航空研究開発機構
Publication Date: 2006-03-31
Publication Date (W3CDTF): 2006-03-31
Periodical title: 宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
No. or year of volume/issue: JAXA-SP-05-036E
Volume: JAXA-SP-05-036E
Pages: 1-6
ISSN (Periodical Title): ISSN : 1349-113X
Text Language Code: eng
Subject Heading: InGaAs
単結晶
飽和溶融帯移動法
光通信
フォトルミネッセンス
気相エピタキシー
結晶成長
光ファイバ
single crystal
traveling liquidus zone method
optical communication
photoluminescence
vapor phase epitaxy
crystal growth
optical fiber
Target Audience: 一般
Note (General): We grew compositionally homogeneous platy single crystals of In(0.1)Ga(0.9)As composition by the Traveling Liquidus Zone (TLZ) method. We also fabricated In(x)Ga(1-x)As-SQWs on the In(0.1)Ga(0.9)As substrate by the Metal Organic Vapor Epitaxy (MOVPE) method. In the photoluminescence (PL) measurement, we observed emission at 1.3 micrometer from the In(0.5)Ga(0.5)As/In(0.1)Ga(0.9)As-SQW.
資料番号: AA0049798001
レポート番号: JAXA-SP-05-036E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6089&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6089&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ