文書・図像類

In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2

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In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2

Material type
文書・図像類
Author
児玉, 茂夫ほか
Publisher
宇宙開発事業団
Publication date
2000-09-29
Material Format
Digital
Capacity, size, etc.
-
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Notes on use

Note (General)：

多成分ゾーン溶融法を使ったIn(0.3)Ga(0.7)As種結晶の準備が宇宙実験のために現在行われている。GaAsの種結晶と供給結晶に挟まれたInAs結晶の資料で、成長するIn(x)Ga(1-x)As結晶のx値を0.03から0.3まで増加させ、数ミリに成長するまで、0.3を維持した。今年になって、I...

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Digital

Material Type
文書・図像類
Title
In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, 2
Author/Editor
児玉, 茂夫
中村, 哲夫
木下, 恭一
加藤, 浩和
依田, 真一
Kodama, Shigeo.
Nakamura, Tetsuo.
Kinoshita, Kyoichi
Kato, Hirokazu
Yoda, Shinichi
Author Heading
児玉, 茂夫
中村, 哲夫
木下, 恭一
加藤, 浩和
依田, 真一
Kodama, Shigeo.
Nakamura, Tetsuo.
Kinoshita, Kyoichi
Kato, Hirokazu
Yoda, Shinichi
Publication, Distribution, etc.
宇宙開発事業団
Publication Date
2000-09-29
Publication Date (W3CDTF)
2000-09-29
Alternative Title
多成分ゾーン溶融法によるIn(0.3)Ga(0.7)As種結晶の準備　2
Periodical title
NASDA Technical Memorandum
Pages
61-64