Preparation of I[lc]nG[lc]aA[lc]s starting materials having the gradient I[lc]nA[lc]s concentration

Material type: 文書・図像類

Author: 弘田, 龍ほか

Publisher: 宇宙開発事業団

Publication date: 2001-12-25

Material Format: Digital

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Note (General)：: InGaAs starting materials for the crystal growth by the TLZ (Traveling Liquides Zone) method were prepared by the directionally solidification method....

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Material Type: 文書・図像類
Title: Preparation of I[lc]nG[lc]aA[lc]s starting materials having the gradient I[lc]nA[lc]s concentration
Author/Editor: 弘田, 龍
龍見, 雅美
花上, 康宏
木下, 恭一
Hirota, Ryu
Tatsumi, Masami
Hanaue, Yasuhiro
Kinoshita, Kyoichi
Author Heading: 弘田, 龍
龍見, 雅美
花上, 康宏
木下, 恭一
Hirota, Ryu
Tatsumi, Masami
Hanaue, Yasuhiro
Kinoshita, Kyoichi
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2001-12-25
Publication Date (W3CDTF): 2001-12-25
Alternative Title: InAsの勾配濃度をもつInGaAs初期物質の調製
Periodical title: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
Pages: 51-57
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: In(sub x)Ga(sub 1-x)As
InAs
移行液相ゾーン法
方向性凝固
温度プロファイル
結晶成長
微小重力
過冷却
traveling liquidus method
directional solidification
temperature profile
crystal growth
microgravity
supercooling
Target Audience: 一般
Note (General): InGaAs starting materials for the crystal growth by the TLZ (Traveling Liquides Zone) method were prepared by the directionally solidification method. The materials have a micro- and microscopically smooth InAs concentration profile without occurrence of a constitutional supercooling. The samples having nominal In composition(x) of 0.3 were cut from the source materials having x = 0.3 - 0.4. Concerning the constitutional supercooling, an evidence for free nucleation ahead of a growth interface from a measurement of microscopic composition profile has been found.
資料番号: AA0032602004
レポート番号: NASDA-TMR-010016E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42547&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42547&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ