Study of oxygen atom diffusion coefficient in silicon melts

Material type: 文書・図像類

Author: 寺嶋, 一高ほか

Publisher: 宇宙開発事業団

Publication date: 2002-12-27

Material Format: Digital

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Note (General)：: The oxygen diffusion has been studied by using the capillary technique. As the initial stage of quartz dissolution into silicon melts causes an experi...

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Material Type: 文書・図像類
Title: Study of oxygen atom diffusion coefficient in silicon melts
Author/Editor: 寺嶋, 一高
西村, 鈴香
北村, 大剛
Terashima, Kazutaka
Nishimura, Suzuka
Kitamura, Daigo
Author Heading: 寺嶋, 一高
西村, 鈴香
北村, 大剛
Terashima, Kazutaka
Nishimura, Suzuka
Kitamura, Daigo
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2002-12-27
Publication Date (W3CDTF): 2002-12-27
Alternative Title: 溶融シリコン中の酸素原子拡散係数の研究
Periodical title: 宇宙開発事業団技術報告: Modeling and Precise Experiments of Diffusion Phenomena in Melts Under Microgravity: Annual Reports 2001 = NASDA Technical Memorandum: Modeling and Precise Experiments of Diffusion Phenomena in Melts Under Microgravity: Annual Reports 2001
Pages: 143-145
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: 酸素原子
拡散係数
シリコン結晶
窒化ボロン
石英結晶
多結晶
濃度プロフィル
毛細管技術
結晶欠陥
oxygen atom
diffusion coefficient
silicon crystal
boron nitride
quartz crystal
polycrystal
concentration profile
capillary technique
crystal defect
Target Audience: 一般
Note (General): The oxygen diffusion has been studied by using the capillary technique. As the initial stage of quartz dissolution into silicon melts causes an experimental error, the holding time of more than 30 min was needed to analyze the diffusion constant. The analyzed diffusion constant of oxygen atoms in silicon melts is suggested to be 2 x 10(exp -4) cm(sup 2)/s.
資料番号: AA0045399015
レポート番号: NASDA-TMR-020025E
Access Restrictions: 限定公開
Periodical Title (NCID): AN00364784
https://ci.nii.ac.jp/ncid/AN00364784
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ