Thermophysical properties of I[lc]nG[lc]aA[lc]s

Material type: 文書・図像類

Author: 松本, 聡ほか

Publisher: 宇宙開発事業団

Publication date: 2002-12-27

Material Format: Digital

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Note (General)：: The viscosity and thermal diffusivity of In(x)Ga(1-x)As with various compositions has been measured up to 1,500 K. The double crucible method and its ...

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Material Type: 文書・図像類
Title: Thermophysical properties of I[lc]nG[lc]aA[lc]s
Author/Editor: 松本, 聡
弓削, 定義
林, 義雄
清野, 悠
伊丹, 俊夫
木下, 恭一
Matsumoto, Satoshi
Yuge, Sadayoshi
Hayashi, Yoshio
Seino, Yu
Itami, Toshio
Kinoshita, Kyoichi
Author Heading: 松本, 聡
弓削, 定義
林, 義雄
清野, 悠
伊丹, 俊夫
木下, 恭一
Matsumoto, Satoshi
Yuge, Sadayoshi
Hayashi, Yoshio
Seino, Yu
Itami, Toshio
Kinoshita, Kyoichi
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2002-12-27
Publication Date (W3CDTF): 2002-12-27
Alternative Title: InGaAsの熱物理学的性質
Periodical title: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals
Pages: 55-60
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: 熱物理学的性質
粘度
熱拡散係数
InGaAs
2重るつぼ法
温度依存性
結晶成長
化学組成
組成均一性
半導体材料
オプトエレクトロニクス装置
温度勾配
thermophysical property
viscosity
thermal diffusivity
double crucible method
temperature dependence
crystal growth
chemical composition
compositional homogeneity
semiconductor material
optoelectronic device
temperature gradient
Target Audience: 一般
Note (General): The viscosity and thermal diffusivity of In(x)Ga(1-x)As with various compositions has been measured up to 1,500 K. The double crucible method and its availabilities to measure the high vaporizing materials on both measurement could be verified. The thermophysical data of In(x)Ga(1-x)As (x = 0.3, 0.5, and 0.8) could be obtained for the first time. The temperature dependence of viscosity of molten In(0.8)Ga(0.2)As was expressed as eta(T) = 0.213 exp(1.85 x 10(exp 3)/T) (mPa s) by an oscillating cup method. The thermal diffusivity of molten In(0.8)Ga(0.2)As was 11 mm(sup 2)/s at 1,313 K and that of solid was 1.8 mm(sup 2)/s at 1,273 K by a laser flush method.
資料番号: AA0045402004
レポート番号: NASDA-TMR-020024E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42843&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42843&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ