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Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

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Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

Material type
文書・図像類
Author
宇宙開発事業団ほか
Publisher
宇宙開発事業団
Publication date
2003-08-29
Material Format
Digital
Capacity, size, etc.
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Note (General):

資料番号: AA0046981000レポート番号: NASDA-TMR-030006E

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Material Type
文書・図像類
Author/Editor
宇宙開発事業団
National Space Development Agency of Japan
Publication, Distribution, etc.
Publication Date
2003-08-29
Publication Date (W3CDTF)
2003-08-29
Alternative Title
化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成
年報
Annual Report
Periodical title
宇宙開発事業団技術報告 = NASDA Technical Memorandum
ISSN (Periodical Title)
ISSN : 1345-7888