Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals

Material type: 文書・図像類

Author: 宇宙開発事業団ほか

Publisher: 宇宙開発事業団

Publication date: 2003-08-29

Material Format: Digital

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Note (General)：: 資料番号: AA0046981000レポート番号: NASDA-TMR-030006E

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Material Type: 文書・図像類
Title: Annual report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs). Growth of homogeneous crystals
Author/Editor: 宇宙開発事業団
National Space Development Agency of Japan
Author Heading: 宇宙開発事業団
National Space Development Agency of Japan
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2003-08-29
Publication Date (W3CDTF): 2003-08-29
Alternative Title: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成
年報
Annual Report
Periodical title: 宇宙開発事業団技術報告 = NASDA Technical Memorandum
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: TLZ法
結晶成長
In(x)Ga(1-x)As
温度勾配
濃度
過冷却
モデル
並進運動
TLZ method
crystal growth
temperature gradient
concentration
supercooling
model
translational motion
Target Audience: 一般
Note (General): 資料番号: AA0046981000
レポート番号: NASDA-TMR-030006E
Source: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42956&item_no=1&attribute_id=31&file_no=1
https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42956&item_no=1&attribute_id=31&file_no=1
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ