超高真空対応非接触容量 : 電圧法によるシリコンの清浄表面と不活性化表面の評価

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Hokkaido University Collection of Scholarly and Academic Papers
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Material Type: 博士論文
Title: 超高真空対応非接触容量 : 電圧法によるシリコンの清浄表面と不活性化表面の評価
Author/Editor: 吉田, 俊幸
Publication, Distribution, etc.: Hokkaido University
Publication Date: 2001-03-23
Publication Date (W3CDTF): 2001
Alternative Title: Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Clean and Passivated Silicon Surfaces
Degree grantor/type: 北海道大学
Hokkaido University
Dissertation Number: 甲第5529号
Degree Type: 博士(工学)
NDC: 500
Target Audience: 一般
Note (General): 出版タイプ： VoR
DOI: 10.11501/3182381
https://doi.org/10.11501/3182381
Format (IMT): application/pdf
Source: 000000399967.pdf （fulltext）
https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/51502/1/000000399967.pdf
Access Restrictions: インターネット公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 北海道大学 : 北海道大学学術成果コレクション