AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用 [論文内容及び審査の要旨]

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Material Type: 博士論文
Title: AlGaN/GaNヘテロ構造における表面・界面の評価および制御とトランジスタ応用 [論文内容及び審査の要旨]
Author/Editor: 越智, 亮太
Author Heading: 越智, 亮太
Publication, Distribution, etc.: Hokkaido University
Publication Date: 2024-03-25
Publication Date (W3CDTF): 2024-03-25
Alternative Title: Characterization and control of surface and interface on AlGaN/GaN heterostructures for transistor applications [an abstract of dissertation and a summary of dissertation review]
Contributor: 本久, 順一
太田, 裕道
赤澤, 正道
Degree grantor/type: 北海道大学
Dissertation Number: 甲第16003号
Degree Type: 博士(工学)
Text Language Code: jpn
NDC: 500
Target Audience: 一般
Note (General): (主査) 教授本久順一, 教授太田裕道, 准教授赤澤正道
情報科学院(情報科学専攻)
Access Restrictions: インターネット公開
References (URI): HDL
http://hdl.handle.net/2115/91955
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 北海道大学 : 北海道大学学術成果コレクション