Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

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Summary, etc.：: <jats:p>Narrow (⩾95 nm) and extremely thin (∼7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure c...

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Material Type: 記事
Title: Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires
Author Heading: Kawamura, Kensaku
Kidera, Toshiro
Nakajima, Anri
Yokoyama, Shin
Publication Date: 2002-04-15
Publication Date (W3CDTF): 2002-04-15
Periodical title: Journal of Applied Physics
No. or year of volume/issue: 91 8
Volume: 91
Issue: 8
Pages: 5213-5220
Publication date of volume/issue (W3CDTF): 2002-04-15
ISSN (Periodical Title): 00218979
Publication (Periodical Title): American Institute of Physics
Text Language Code: en
Subject Heading: General Physics and Astronomy
Target Audience: 一般
DOI: 10.1063/1.1464650
https://doi.org/10.1063/1.1464650
Access Restrictions: インターネット公開
Related Material (URI): https://hiroshima.repo.nii.ac.jp/records/2007188
https://pubs.aip.org/aip/jap/article-pdf/91/8/5213/19183744/5213_1_online.pdf
Is Referenced By: Electrical Conduction in 10nm Thin Polysilicon Wires from 4 to 400K and Their Operation for Hybrid Memory
https://cir.nii.ac.jp/crid/1520572359185224448
Data Provider (Database): 国立情報学研究所 : CiNii Research
https://cir.nii.ac.jp/
Original Data Provider (Database): 学術機関リポジトリデータベース
https://irdb.nii.ac.jp
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NAID: 120000879699