Generalized Design Considerations and Analysis of Class-E Amplifier for Sinusoidal and Square Input Voltage Waveforms

Material type: 文書・図像類

Author: HAYATI, Mohsenほか

Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.

Publication date: 2015-01

Material Format: Digital

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Note (General)：: type:textIn this paper, analytical expressions and design equations are presented for the class-E amplifier with the MOSFET nonlinear drain-source and...

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Material Type: 文書・図像類
Title: Generalized Design Considerations and Analysis of Class-E Amplifier for Sinusoidal and Square Input Voltage Waveforms
Author/Editor: HAYATI, Mohsen
LOTFI, Ali
KAZIMIERCZUK, Marian K.
SEKIYA, Hiroo
Author Heading: HAYATI, Mohsen
LOTFI, Ali
KAZIMIERCZUK, Marian K.
SEKIYA, Hiroo
Publication, Distribution, etc.: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.
Publication Date: 2015-01
Publication Date (W3CDTF): 2015-01
Periodical title: IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
No. or year of volume/issue: 62 1
Volume: 62
Issue: 1
Pages: 211-220
ISSN (Periodical Title): ISSN : 0278-0046
Text Language Code: eng
Subject Heading: External linear shunt capacitance
class-E ZVS/ZDVS conditions
output power
load resistance
nonlinear drain-to-source capacitance
linear gate-to-drain capacitance
Target Audience: 一般
Note (General): type:text
In this paper, analytical expressions and design equations are presented for the class-E amplifier with the MOSFET nonlinear drain-source and linear gate-drain parasitic capacitances along with the external linear shunt capacitance. The class-E amplifier characteristics are presented as functions of the ratio of the sum of the external linear shunt capacitance and the MOSFET linear gate-drain capacitance to the MOSFET drain-source junction capacitance when the switch voltage is zero. Although the effect of the MOSFET linear gate-drain capacitance is similar to that of the external linear shunt capacitance on the design of the class-E amplifier with the square input voltage, the difference between their effects should be considered for the sinusoidal input voltage, which is one of the most important suggestions in this paper. Additionally, analytical expressions of output power capability is given, which is considerable affected by the external linear shunt capacitance. Two design examples are presented with taken into account the output power as design specification at 8.7-W output power and 4-MHz operating frequency along with the PSpice-simulations and experimental waveforms.
Format (IMT): application/pdf
Source: https://opac.ll.chiba-u.jp/da/curator/900118202/20150130_SEKIYA.pdf
https://opac.ll.chiba-u.jp/da/curator/900118202/20150130_SEKIYA.pdf
Access Restrictions: 限定公開
Related Material (DOI): 10.1109/TIE.2014.2327598
Has Version (URI): http://dx.doi.org/10.1109/TIE.2014.2327598
URI
http://dx.doi.org/10.1109/TIE.2014.2327598
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 千葉大学 : 千葉大学学術成果リポジトリ