一定容量電圧過渡分光法によるバルクGaAs結晶中電子トラップの評価

Material type: 文書・図像類

Author: 池田, 幸治ほか

Publisher: 愛知工業大学

Publication date: 1998-03-31

Material Format: Digital

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Note (General)：: We have found that the EL5 and EL6 traps in bulk GaAs are consisted of six traps (A1,A2,A3,A4,A5,A6) from Constant-Capacitance Voltage Transient Spect...

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Material Type: 文書・図像類
Title: 一定容量電圧過渡分光法によるバルクGaAs結晶中電子トラップの評価
Author/Editor: 池田, 幸治
伊藤, 明
徳田, 豊
Author Heading: 池田, 幸治
伊藤, 明
徳田, 豊
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 1998-03-31
Publication Date (W3CDTF): 1998-03-31
Alternative Title: イッテイヨウリョウデンアツカトブンコウホウニヨルバルク GAAS ケッショウチュウデンシトラップノヒョウカ
Evaluation of electron traps in bulk GaAs crystals by Constant-Capacitance Voltage Transient Spectroscopy
Periodical title: 愛知工業大学研究報告. B, 専門関係論文集 = Bulletin of Aichi Institute of Technology. Part B
No. or year of volume/issue: 33
Volume: 33
Pages: 43-47
ISSN (Periodical Title): ISSN : 0387-0812
Text Language Code: jpn
Target Audience: 一般
Note (General): We have found that the EL5 and EL6 traps in bulk GaAs are consisted of six traps (A1,A2,A3,A4,A5,A6) from Constant-Capacitance Voltage Transient Spectroscopy (CCVTS) measurement. In this study, we analyze the EL3 and EL2 traps in bulk GaAs by CCVTS, two traps which corresponds to OX and ELO traps are separated from the wave analysis of EL3 and EL2,respectively. The wafers used in this study are not intentionally doped with Oxygen. We discuss the relationship between concentrations of OX and ELO concentration.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1059
Format (IMT): application/pdf
Source: http://repository.aitech.ac.jp/dspace/bitstream/11133/1059/1/%e7%b4%80%e8%a6%8133%e5%8f%b7B%28P43-47%29.pdf
http://repository.aitech.ac.jp/dspace/bitstream/11133/1059/1/%e7%b4%80%e8%a6%8133%e5%8f%b7B%28P43-47%29.pdf
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ