シリコン基板上窒化物半導体の高品質化に関する研究

Material type: 文書・図像類

Author: 澤木, 宣彦ほか

Publisher: 愛知工業大学

Publication date: 2011-09-05

Material Format: Digital

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Note (General)：: Growth of a high quality GaN on a silicon substrate has been attempted. In order to prevent Ga-Si reaction at high temperatures, an AlInN alloy was te...

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Material Type: 文書・図像類
Title: シリコン基板上窒化物半導体の高品質化に関する研究
Author/Editor: 澤木, 宣彦
岩田, 博之
川北, 将吾
本田, 善央
Author Heading: 澤木, 宣彦
岩田, 博之
川北, 将吾
本田, 善央
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2011-09-05
Publication Date (W3CDTF): 2011-09-05
Alternative Title: シリコン　キバン　ジョウ　チッカブツ　ハンドウタイ　ノ　コウヒンシツカ　ニ　カンスル　ケンキュウ
Growth of high quality III-nitrides on silicon substrate
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 13
Volume: 13
Pages: 19-22
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: jpn
Target Audience: 一般
Note (General): Growth of a high quality GaN on a silicon substrate has been attempted. In order to prevent Ga-Si reaction at high temperatures, an AlInN alloy was tested as the intermediate layer between the GaN grown layer and the Si substrate. It was found that a film as thin as 6nm reduces the threading dislocation density in the GaN top layer. In a carbon doped AlGaN on Si, FTIR spectra showed a new specific signal at 945cm-1 following a strong signal at 888cm-1 due to Al-N bond. The new signal was attributed to the LVM due to Al-C bond. This suggests that the carbon has been doped on the nitrogen site to be an acceptor in the AlGaN.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1733
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ