Si 基板上に成長した半極性GaNの欠陥構造評価

Material type: 文書・図像類

Author: 澤木, 宣彦ほか

Publisher: 愛知工業大学

Publication date: 2013-09-30

Material Format: Digital

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Note (General)：: Defect structure on the coalescene of semipolar (1-101 )GaN grown on a pattemed Si substrate was investigated using high resolution transmission elect...

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Material Type: 文書・図像類
Title: Si 基板上に成長した半極性GaNの欠陥構造評価
Author/Editor: 澤木, 宣彦
中北, 太平
伊藤, 翔梧
岩田, 博之
谷川, 智之
本田, 善央
山口, 雅史
天野, 浩
Author Heading: 澤木, 宣彦
中北, 太平
伊藤, 翔梧
岩田, 博之
谷川, 智之
本田, 善央
山口, 雅史
天野, 浩
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2013-09-30
Publication Date (W3CDTF): 2013-09-30
Alternative Title: Si キバンジョウニセイチョウシタハンキョクセイ GaN ノケッカンコウゾウヒョウカ
Defect Structure in a Semi-polar GaN grown on an Si Substrate
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 15
Volume: 15
Pages: 27-30
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: jpn
Target Audience: 一般
Note (General): Defect structure on the coalescene of semipolar (1-101 )GaN grown on a pattemed Si substrate was investigated using high resolution transmission electron microscopy. The reduction of threading dislocation density was achieved by facet based growth mode on AIN nucleation layer， while the reduction of stacking faults density wa achieved by transition of multiple stacking errors to a single stacking erτor during the off-axis growth.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/2782
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ