Si基板上高品質GaNの光学スペクトル

Material type: 文書・図像類

Author: 澤木, 宣彦ほか

Publisher: 愛知工業大学

Publication date: 2014-09-30

Material Format: Digital

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Note (General)：: "Optimization of the MOVPE growth processes of GaN on Si substrate has been attempted to improve the crystalline/optical properties at room temperatur...

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Material Type: 文書・図像類
Title: Si基板上高品質GaNの光学スペクトル
Author/Editor: 澤木, 宣彦
伊藤, 翔悟
小林, 宙主
刑部, 勇希
入江, 将嗣
本田, 善央
天野, 浩
安, 亨洙
Author Heading: 澤木, 宣彦
伊藤, 翔悟
小林, 宙主
刑部, 勇希
入江, 将嗣
本田, 善央
天野, 浩
安, 亨洙
Publication, Distribution, etc.: 愛知工業大学
Publication Date: 2014-09-30
Publication Date (W3CDTF): 2014-09-30
Alternative Title: Si キバンジョウコウヒンシツ GaN ノコウガクスペクトル
"Optical spectra of a high quality GaN grown on Si substrate"
Periodical title: 総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
No. or year of volume/issue: 16
Volume: 16
Pages: 29-33
ISSN (Periodical Title): ISSN : 1344-9672
Text Language Code: jpn
Target Audience: 一般
Note (General): "Optimization of the MOVPE growth processes of GaN on Si substrate has been attempted to improve the crystalline/optical properties at room temperature. It was found that the yellow luminescence band is suppressed substantially by adopting an AIInN buffer layer and an In doped AIN nucleation layer. The photoluminescence spectra showed strong and narrow edge emission peak. As far as the subband gap defect related emission band, four spectral peaks were found out at ; 514.5 nm (2.410eV), 546.5 nm (2.269eV), 553.5 nm (2.240eV), and 584.5 nm (2.121eV). The spectral peak energies were independent of the growth methods/conditions and the emission is attributed to the transition associated with an intrinsic defect in GaNas Ga vacancy."
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/2841
Access Restrictions: 限定公開
Periodical Title (NCID): AA11484797
https://ci.nii.ac.jp/ncid/AA11484797
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 愛知工業大学 : 愛知工業大学学術情報リポジトリ