Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

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Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

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Material Type: 記事
Title: Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
Author Heading: Yuichi Oshima
https://orcid.org/0000-0001-8293-4891
Elaheh Ahmadi
https://orcid.org/0000-0002-8330-9366
Stephen Kaun
Feng Wu
James S Speck
Publication Date: 2017-11-22
Publication Date (W3CDTF): 2017-11-22
Periodical title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
No. or year of volume/issue: 33 1
Volume: 33
Issue: 1
Pages: 15013-15013
Publication date of volume/issue (W3CDTF): 2017-11-22
ISSN (Periodical Title): 02681242
Publication (Periodical Title): IOP Publishing
Text Language Code: en
Subject Heading: β-Ga2O3
MBE
Target Audience: 一般
DOI: 10.48505/nims.4360
Access Restrictions: インターネット公開
Rights (production): © 2017 IOP Publishing Ltd<br> This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa9c4d.
Related Material (URI): https://mdr.nims.go.jp/pid/8aa2e172-638d-4607-af4d-67df1403fa12
Data Provider (Database): 国立情報学研究所 : CiNii Research
Original Data Provider (Database): 学術機関リポジトリデータベース
https://irdb.nii.ac.jp