Volume number15(1);JANUARY 1976

Japanese journal of applied physics 15(1);JANUARY 1976

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Japanese journal of applied physics15(1);JANUARY 1976

Call No. (NDL)
Z53-A375
Persistent ID (NDL)
info:ndljp/pid/11195986
Material type
雑誌
Publisher
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo
Publication date
1976-01
Publication Frequency
-
Material Format
Digital
Capacity, size, etc.
30 cm
NDC
-
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Notes on use

Holding issue:

1(1):1962.7 - 20(12):1981.12

Volume Range:

1(1):1962.7 - 20(12):1981.12

Note (General):

Description based on the latest issueWith: Index ; Suppl

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Table of Contents

  • CONTENTS/

  • Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCL Oxidation/Hiromitsu SHIRAKI/1~

  • New Methods of Vapour Phase Epitaxial Growth of GaAs/Hisashi SEKI ; Akinori KOOKITU ; Katuro OHTA ; Masatomo FUJIMOTO/11~

  • Temperature and Field Effects on Atomic Arrangements of Clean Tungsten Tip Surfaces Observed by FIM/Satoshi NISHIGAKI ; Shogo NAKAMURA/19~

  • Properties of Excited Surface-Wave Domains in CdS/Shigetaka MATSUMOTO ; Seijiro FURUKAWA/29~

Bibliographic Record

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Digital

Material Type
雑誌
Volume
15(1);JANUARY 1976
Publication Date
1976-01
Publication Date (W3CDTF)
1976-01
Year and volume of publication
1(1):1962.7 - 20(12):1981.12
Size
30 cm
ISSN (Periodical Title)
0021-4922
ISSN-L (Periodical Title)
0021-4922