Japanese journal of applied physics18(5);MAY 1979

• Material Type: 雑誌
• ISSN: 0021-4922
• ISSN-L: 0021-4922
• Title: Japanese journal of applied physics
• Volume: 18(5);MAY 1979
• Publication, Distribution, etc.: Tokyo : Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo
• Publication Date: 1979-05
• Publication Date (W3CDTF): 1979-05
• Year and volume of publication: 1(1):1962.7 - 20(12):1981.12
• Size: 30 cm
• Place of Publication (Country Code): JP
• Text Language Code: eng; fre; ger
• NDLC: ZM35
• Note (General): Description based on the latest issue; With: Index ; Suppl
• Note (Cumulative Index): 総目次・総索引あり
• DOI: 10.11501/11196035; https://doi.org/10.11501/11196035
• Persistent ID (NDL): info:ndljp/pid/11196035; https://dl.ndl.go.jp/pid/11196035
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Producer: 国立国会図書館
• Production year (W3CDTF): 2019-03-15
• Date Accepted (W3CDTF): 2018-12-04T13:52:55+09:00
• Format (IMT): image/jp2
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Year and volume of holding: 1(1):1962.7 - 20(12):1981.12
• Call No.: Z53-A375
• Original Material (JPNO): 10010781
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11196682; https://dl.ndl.go.jp/pid/11196682
• Continues (Persistent ID (NDL)): info:ndljp/pid/11196685; https://dl.ndl.go.jp/pid/11196685; info:ndljp/pid/11226428; https://dl.ndl.go.jp/pid/11226428; info:ndljp/pid/11399507; https://dl.ndl.go.jp/pid/11399507
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

Table of Contents

CONTENTS/

Improvements in SSD Growth of GaP/Kunio KANEKO ; Masaaki AYABE ; Nobuyuki ISAWA/861～

Solution Growth of ZnS, ZnSe, CdS and Their Mixed Compounds Using Tellurium as a Solvent/Masako WASHIYAMA ; Ken-ichi SATO ; Masaharu AOKI/869～

Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCl Oxidation/Yasuaki HOKARI/873～

Thermomigration of Scandium in Aluminum/Eiji HASHIMOTO ; Kozo MIURA ; Takao KINO ; Rokuji MATSUSHITA ; Mutsuo KOYAMA/881～