Japanese journal of applied physics20(9);SEPTEMBER 1981

• Material Type: 雑誌
• ISSN: 0021-4922
• ISSN-L: 0021-4922
• Title: Japanese journal of applied physics
• Volume: 20(9);SEPTEMBER 1981
• Publication, Distribution, etc.: Tokyo : Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo
• Publication Date: 1981-09
• Publication Date (W3CDTF): 1981-09
• Year and volume of publication: 1(1):1962.7 - 20(12):1981.12
• Size: 30 cm
• Place of Publication (Country Code): JP
• Text Language Code: eng; fre; ger
• NDLC: ZM35
• Note (General): Description based on the latest issue; With: Index ; Suppl
• Note (Cumulative Index): 総目次・総索引あり
• DOI: 10.11501/11196070; https://doi.org/10.11501/11196070
• Persistent ID (NDL): info:ndljp/pid/11196070; https://dl.ndl.go.jp/pid/11196070
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Producer: 国立国会図書館
• Production year (W3CDTF): 2019-03-15
• Date Accepted (W3CDTF): 2018-12-04T13:52:55+09:00
• Format (IMT): image/jp2
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Year and volume of holding: 1(1):1962.7 - 20(12):1981.12
• Call No.: Z53-A375
• Original Material (JPNO): 10010781
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11196682; https://dl.ndl.go.jp/pid/11196682
• Continues (Persistent ID (NDL)): info:ndljp/pid/11196685; https://dl.ndl.go.jp/pid/11196685; info:ndljp/pid/11226428; https://dl.ndl.go.jp/pid/11226428; info:ndljp/pid/11399507; https://dl.ndl.go.jp/pid/11399507
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

Table of Contents

CONTENTS/

Peierls Phase Transition (Invited Paper)/Seiichi KAGOSHIMA/1617～

Electrical Contact Properties of Metal-Chalcogenide Amorphous Semiconductor Systems/Shuichi OKANO ; Makoto SUZUKI ; Masakuni SUZUKI/1635～

Isothermal Recovery of Electrical Resistivity in Aluminum Immediately after Deformation/Osami HARUYAMA/1641～

Single Crystalline Silicide Formation/Shuichi SAITOH ; Hiroshi ISHIWARA ; Tanemasa ASANO ; Seijiro FURUKAWA/1649～