Sony Technical Reports 26(1);1987
Available with Digitized Contents Transmission Service
NDL Digital Collections
Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.
Search by Bookstore
Read this material in an accessible format.
Table of Contents
CONTENTS OF TECH. REPORTS/
A. COMPOUND SEMICONDUCTOR MATERIALS//～33
1 Photoluminescence Study on the Interface of a GaAs／AlxGa1-xAs Heterostructure Grown by Metalorganic Chemical Vapor Deposition/Akimoto K. ; Tamamura K. ; Ogawa J. ; Mori Y. ; Kojima C./1～5
2 Effective Electron-Density Variation and Atomic Configuration of Al in AlxGa1-xAs/Akimoto K. ; Mori Y. ; Kojima C./6～10
3 Complex Refractive Indices of AlGaAs at High Temperatures Measured by in Situ Reflectometry during Growth by Metalorganic Chemical Vapor Deposition/Kawai H. ; Imanaga S. ; Kaneko K. ; Watanabe N./11～15
Search by Bookstore
Read in Disability Resources
- Mina Search
- プレーンテキスト
Registered users of Mina Search can download or stream this content.
Bibliographic Record
You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.
- Material Type
- 雑誌
- Volume
- 26(1);1987
- Publication, Distribution, etc.
- Publication Date
- [1987]
- Publication Date (W3CDTF)
- 1987
- Year and volume of publication
- 26(1):1987 -
- Size
- 26 cm
- ISSN (Periodical Title)
- 0916-7153
- ISSN-L (Periodical Title)
- 0916-7153