Available with Digitized Contents Transmission Service
国立国会図書館デジタルコレクション
Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.
Search by Bookstore
Table of Contents
CONTENTS/
Semiconductors//2577~
Damage Depth Profiles in Ion-Implanted Silicon by the Photoacoustic Displacement Technique/Tohru HARA ; Takeshi MURAKI ; Masataka SAKURAI ; Satoru TAKEDA/2577~
Properties and Mechanism of Si Selective Epitaxial Growth on Al₂O₃ using Electron Beam Irradiation/Makoto ISHIDA ; Takashi TOMITA ; Masahiko FUJITA ; Tetsuro NAKAMURA/2582~
Growth and Characterization of In₀.₈₃Ga₀.₁₇As₀.₃₉P₀.₆₁ Layers by Liquid-Phase Epitaxy Using Erbium Gettering/Meng-Chyi WU ; Cheng-Ming CHIU ; Yuan-Kuang TU/2587~
Search by Bookstore
Bibliographic Record
You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.
- Material Type
- 雑誌
- ISSN
- 0021-4922
- ISSN-L
- 0021-4922
- Volume
- Part. 1Part. 132(6A)(383);JUNE 1993
- Part Title
- Regular papers, brief communications & review papers : JJAP
- Author Heading
- 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
- Publication, Distribution, etc.
- Publication Date
- 1993-06
- Publication Date (W3CDTF)
- 1993-06